tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 1 of 4 revised 0 5 /201 6 high power button capsule thyristor dcr1003 series dcr1004 series i t(av) = 1540a v rrm = 1700v current ratings D double side cooled i t(av) mean on - state current half wave resistive load t hs = 55 o c 1540 a i rms rms value t hs = 55 o c 2420 a i t continuous (direct) on - state current t hs = 55 o c 2050 a r (th(j - h) thermal resistance junction to clamping force 19.5kn d.c . .026 o c/w heatsink surface (with mounting grease) half - wave .028 o c/w 3 - phase .030 o c/w current ratings D single side cooled i t(av) mean on - state current half wave resistive load t hs = 55 o c 870 a i rms rms value t hs = 55 o c 1365 a i t continuous (direct) on - state current t hs = 55 o c 1060 a r (th(j - h) thermal resistance junction to clamping force 19.5kn d.c. .06 o c/w heatsink surface (with mounting grease) half - wave .062 o c/w 3 - phase .064 o c/w surge ratings i trm repetitive peak on - state current sinusoidal waveform conduction angle 14920 a ? = 30 o t hs = 55 o c i 2 t i 2 t for fusing 10ms half sine t j = 125 o c 2205000 a 2 sec 3ms half sine t j = 125 o c 1540000 a 2 sec i tsm surge (non - repetitive) on - state current with 50% v rsm tj = 125 o c 21000 a dl t /dt rate of rise of on - state current fro m v d to 100 0 a, gate source 10v 100a/ s 5 ? rise time 0.5 s, t j = 125 o c dv/dt* max linear rate of rise of off - state voltage voltage = 67%v drm , t case = 125 o c 300 v/ s *higher values available. gate ratings v fgm peak forward gate voltage anode positive with respect to cathode 30 v v fgn peak forward gate voltage anode negative with respect to cathode 0.25 v v rgm peak reverse gate voltage 5 v i fgm peak forward gate current anode positive with respect to cathode 10 a p gm peak gate power pulse width = 100 150 w p g mean gate power 10 w temperature & frequency ratings t vj virtual junction temperature on - state (conduction) 135 o c off - state (blocking) 125 o c t stg storage temperature range - 55 to 125 o c f frequency range 10 to 400 hz type number non - repetitive peak voltages v dsm v rsm repetitive peak voltages v drm v rrm outline n DCR1003SN1818 dcr1004sn1818 1800 1700 . dcr1003sn1717 dcr1004sn1717 1700 1600 . dcr1003sn1616 dcr1004sn1616 1600 1500 . dcr1003sn1515 dcr1004sn1515 1500 1400 . dcr1003sn1414 dcr1004sn1414 1400 1300 . dcr1003sn1313 dcr1004sn1313 1300 1200 . dcr1003sn1212 dcr1004sn1212 1200 1100 . dcr1003sn1111 dcr1004sn1111 1100 1000 . dcr1003sn1010 dcr1004sn1010 1000 900 . dcr1003sn0909 dcr1004sn0909 900 800 . dcr1003sn0808 dcr1004sn0808 800 700 . dcr1003sn0707 dcr1004sn0707 700 600 . dcr1003sn0606 dcr1004sn0606 600 500 . dcr1003sn0505 dcr1004sn0505 500 400 . dcr1003sn0404 dcr1004sn0404 400 300 . dcr1003sn0303 dcr1004sn0303 300 200 . dcr1003sn0202 dcr1004sn0202 200 150 . dcr1003sn0101 dcr1004sn0101 100 75 .
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 2 of 4 revised 0 5 /201 6 dcr1003 series dcr1004 series i t(av) = 1540 a v rrm = 1700 v characteristics D t case = 25 o c unless otherwise stated limit 5% typ 95% max units v tm on - state voltage at 2900a peak dcr 1003 1.5 v dcr1004 1.625 v i dm peak off - state current t case = 125 o c 50 ma i rm peak reverse current t case = 125 o c 50 ma i l latching current v d = 5v t p = 30 s 120 ma i h holding current v d = 5v gate open circuit 77 ma td delay time v d = 100v , gate source = 25v 5 ? 0.58 0.8 1.52 s tq circuit commutated i t = 800a, v rrm = 50v, dl rr /dt = 20a/ s 90 215 380 s turn - off time v dr = full rated v d , dv dr /dt = 20v/ s iinear , t case = 125 o c v gt gate trigger voltage v drm = 5v 3.5 v v gd gate non - trigger voltage at v drm , t case = 5v 0.25 v i gt gate trigger current v dwm = 5v 200 ma
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 3 of 4 revised 0 5 /201 6 dcr1003 series dcr1004 series i t(av) = 1540 a v rrm = 1700 v t - 25 - 21
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 4 of 4 revised 0 5 /201 6 dcr1003 series dcr1004 series i t(av) = 1540 a v rrm = 1700 v
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